Products
MMIC

Applications
- Avionics
- Military
- Radio
- Transmitters and receivers
- Synthesizers
Features
- GaAs PD25-00, 100um
- High Frequency up to 50GHz
- Standard MMICs of defense
- Customized MMICs
- RoHs Compliant
Typical Performance Characteristics
- Storage Temperature: -65±150℃
- Operating Temperature: -55±125℃
- Power Range: +30dBm max
No
Filter Group
P/N
Substrate
Type
Description
Size
Data
MEMS RF FILTER

Applications
- Avionics
- Military
- Car radar
- Transmitters and receivers
- 5G and next generation
Features
- Precision MEMS process
- High frequency up to 500GHz
- Silicon substrate
- Au Wire bonding, QFN Package
- RoHs Compliant
Typical Performance Characteristics
- Storage Temperature: -55±125Deg.C
- Operating Temperature: -55±85DegC
- Power Range: +30dBm max
No
C.F.
Part No
Type
Impedance
B/W
I/L
R/L
Attenuation
Dimention
Data
Ceramic Filter

Applications
- Cellular base station Transceivers
- Satellite transceivers
- GPS and car navigation equipment
- Land mobile radios
- CATV
- Modems
- Wireless LANS
- Military
Features
- High Q factor
- Low insertion loss
- Wide frequency and mechanical stability
- Notch filters available
- Surface mount and thru-hole mount
- 50 Ohm standard, 75 Ohm impedance available
- Custom design available
- Available in tape and reel packing
- Sealed packages available
- Compliant to MIL & RoHS Specs
Typical Performance Characteristics
- Temperature Range: -55 to 85℃
- Temperature Stability: ±PPM/℃
No
C.F.
Part No
Type
Impedance
B/W
I/L
R/L
Attenuation
Dimention
Data
Divider & Coupler

Applications
- Avionics
- Military
- Car radar
- Transmitters and receivers
- 5G and next generation
Features
- Precision MEMS process
- High frequency up to 500GHz
- Silicon substrate
- Au Wire bonding, QFN Package
- RoHs Compliant
Typical Performance Characteristics
- Storage Temperature: -55±125Deg.C
- Operating Temperature: -55±85DegC
- Power Range: +30dBm max
Divider & Coupler

Applications
- Avionics
- Military
- Car radar
- Transmitters and receivers
- 5G and next generation
Features
- Precision MEMS process
- High frequency up to 500GHz
- Silicon substrate
- Au Wire bonding, QFN Package
- RoHs Compliant
Typical Performance Characteristics
- Storage Temperature: -55±125Deg.C
- Operating Temperature: -55±85DegC
- Power Range: +30dBm max
